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MAHDI POURFATH PDF

Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.

Unlike conventional strain gauges where geometric and piezoelectric terms contribute to the gauge factor, in these materials the intervalley phonon-limited mobility is strongly affected by strain, which results in large gauge factors.

Mahdi Pourfath was born in Tehran, Iran, in The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions.

Publications Authored by Mahdi Pourfath | PubFacts

He studied electrical engineering pourfqth the Sharif University of Technology, where he received the degree of Master of Science in The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap. The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility.

He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented.

Optical Properties of Graphene Nanoribbons. Computational Single-Electronics Majdi Wasshuber. Mahdi Pourfath was born in Tehran, Iran, in Hierarchical Device Simulation Christoph Jungemann.

In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs. Mahdi Pourfath MSc Dr. Therefore the device characteristics can be well optimized by careful geometric design. Looking for beautiful books? The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair. His scientific interests include the numerical study of novel nanoelectronic devices. His scientific interests include the numerical study of novel nano-electronic devices.

Mahdi Pourfath MSc Dr. One of the many interesting properties of Dirac electrons in graphene are the drastic changes of the conductivity of graphene-based structures with the confinement of electrons. The optical transition matrix elements and the resulting selection rules were also derived. We have performed a comprehensive analysis on the effect of strain on the mobility pourfth several TMDs MoS 2MoSe 2WS 2and WSe 2employing ab initio simulations of the band structure and the linearized Boltzmann transport equation for mobility evaluation, including the effects of intrinsic phonons, remote phonons, mhadi screened charge impurities.

The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation

All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are examined and efficient methods for their evaluation are explained. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed.

He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs.

Visit our Beautiful Books page and find lovely books for kids, photography lovers and more. The quasi-static approximation QSA was used to investigate the dynamic response of these devices.

For dynamic response, it is also desirable to use methods based on non-QSA. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes.

Mahdi Pourfath

In short devices less than nm carrier transport through the device is nearly ballistic. Mahdi Pourfath was born in Tehran, Iran, in Other books in this series.

We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can improve not only the ambipolar behavior and static characteristics but also the dynamic characteristics of the device. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher.

Check out the top books of the year on our page Best Books of Their electronic properties exhibit a dependence on the ribbon direction and width. Our studies pave the way for improving the performance of TMD-based electronic devices by strain engineering.